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| (R) STPS60L40CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION NEGLIGIBLE SWITCHING LOSSES ALLOWING HIGH FREQUENCY OPERATION AVALANCHE RATED 2 x 30 A 40 V 150C 0.50 V A1 K A2 A2 K A1 TO-247 DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and DC to DC converters. Packaged in TO-247 this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 135C = 0.5 Per diode Per device Parameter Repetitive peak reverse voltage Value 40 50 30 60 600 2 4 - 65 to + 150 150 10000 A A A C C V/s Unit V A A tp = 10 ms Sinusoidal tp=2 s square F=1kHz tp = 100 s square dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth(j-a) July 1999 - Ed: 4A 1/4 STPS60L40CW THERMAL RESISTANCES Symbol Rth (j-c) Rth(c) Junction to case Parameter Per diode Total Coupling Value 0.75 0.42 0.1 Unit C/W C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 0.28 x IF(AV) + 0.0073 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average current versus temperature ( = 0.5) (per diode). ambient IF = 30 A IF = 30 A IF = 60 A IF = 60 A 0.64 0.44 VR = VRRM 30 Min. Typ. Max. 1.5 110 0.55 0.5 0.73 0.72 Unit mA mA V VF * 22 20 18 16 14 12 10 8 6 4 2 0 PF(av)(W) = 0.05 = 0.1 = 0.2 = 0.5 =1 35 30 25 20 15 T IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=15C/W 10 5 tp T IF(av) (A) 0 5 10 15 20 25 30 =tp/T =tp/T tp 0 Tamb(C) 50 75 100 125 150 35 40 0 25 2/4 STPS60L40CW Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. IM(A) 400 350 300 250 200 150 100 50 0 1E-3 IM t Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=25C 0.6 0.4 0.2 = 0.5 Tc=75C = 0.2 = 0.1 T =0.5 t(s) 1E-2 1E-1 Tc=125C Single pulse tp(s) 1E-3 1E-2 1E+0 0.0 1E-4 =tp/T tp 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). IR(mA) 1E+3 Tj=150C C(nF) 10.0 F=1MHz Tj=25C 1E+2 Tj=125C 1E+1 1E+0 1E-1 1E-2 0 5 10 Tj=100C 1.0 Tj=25C VR(V) 15 20 25 30 35 40 VR(V) 0.1 1 2 5 10 20 50 Fig. 7: Forward voltage drop versus forward current (per diode). IFM(A) 200 100 Typical values Tj=150C Maximum values Tj=125C 10 Maximum values Tj=100C Maximum values Tj=25C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 3/4 STPS60L40CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. Millimeters Max. 5.15 2.60 0.80 1.40 Inches Min. Typ. Max. 0.191 0.203 0.086 0.102 0.015 0.031 0.039 0.055 0.118 0.078 0.078 0.094 0.118 0.133 0.429 0.608 0.620 0.781 0.793 0.145 0.169 0.728 0.559 0.582 1.362 0.216 0.078 0.118 5 60 0.139 0.143 V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D Min. Typ. A 4.85 D 2.20 E 0.40 F 1.00 F1 3.00 F2 2.00 F3 2.00 F4 3.00 G 10.90 H 15.45 L 19.85 L1 3.70 L2 18.50 L3 14.20 L4 34.60 L5 5.50 M 2.00 V 5 V2 60 Dia. 3.55 2.40 3.40 15.75 20.15 4.30 14.80 3.00 3.65 Cooling method : C Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Delivery mode Tube Ordering type STPS60L40CW Marking STPS60L40CW Package TO-247 Weight 4.4g Base qty 30 Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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